MODULAR MULTI-POINT VALVE INVERTER FOR HIGH VOLTAGES Russian patent published in 2018 - IPC H02J3/36 H02M1/44 H02M7/483 

Abstract RU 2652690 C2

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering and can be used to form converter. In modular multi-point valve inverter for high voltages, submodule (1) comprises the first sub-block (2), which comprises the first energy accumulator (21) connected in parallel to the first energy storage device, the first series connection of two power semiconductor switching blocks (22, 23), each of which comprises connected and disconnected power semiconductor device with the same transmission direction and each of which is conductive against said transmission direction, and the first connecting terminal (X2), which is connected to potential point between the power semiconductor switching blocks of the first serial connection. In addition, the submodule (1) comprises the second sub-block (3), which comprises the second energy storage device (31) connected in parallel with the second energy storage device, the second series connection of two power semiconductor switching blocks (32, 33), each of which has connected and disconnected power semiconductor device with the same transmission direction and each of which is conductive against said transmission direction, and the second connecting terminal (X1), which is connected to potential point between the power semiconductor switching blocks of the second serial connection. First sub-block (2) and the second sub-block (3) are connected to one another by means of connecting means (4). In this connection, the connecting means (4) comprise emitter coupling branch (41) that connects the emitter of the first power semiconductor switching unit of the first serial connection with the emitter of the first power semiconductor switching unit of the second series connection, the collector connecting branch (42), which connects the collector of the second power semiconductor switching unit of the first serial connection to the collector of the second power semiconductor switching unit of the second series connection, and switching branch (43) in which switching unit (44) is located and which connects the emitter branch branch to the collector connecting branch. Invention is characterized in that at least one power semiconductor switching unit (45, 46) is located in the emitter connection branch (41) or in the collector connecting branch (42).

EFFECT: technical result is decrease in power loss during commutation due to the generation of negative voltages for bipolar current.

10 cl, 6 dwg

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RU 2 652 690 C2

Authors

Markvardt Rajner

Dates

2018-05-08Published

2014-07-15Filed