DEVICE FOR THE SEMICONDUCTOR MICRO-ASSEMBLIES PROTECTION AGAINST THE THYRISTOR EFFECT Russian patent published in 2018 - IPC H03K17/08 

FIELD: radio equipment and communications; electrical equipment.

SUBSTANCE: invention relates to the electronic equipment electrical power supply technology, and can be used as part of the ground, marine and aerospace based devices. Device consists of the current sensor and the low resistor R_det, installed in the digital microcircuits power bus, inverting operational amplifier, time-setting univibrator, differential amplifier, as well as installed in the power bus N channel MOSFET transistor, which gate is controlled by the inverting operational amplifier, which input is connected to the time-setting univibrator, controlled by the differential amplifier saturation voltage, by the inverting input connected to the current sensor output.

EFFECT: increase in the noise immunity relative to the propagating on the power busbars interferences, increase in the radio electronic equipment operation reliability under the influence of causing the thyristor effect heavy charged particles, caused by the sharp short-term increase in the load current at the moment of switching on and off, in connection with the load possible resonance properties.

1 cl, 1 dwg