SEMICONDUCTOR RECTIFIER Russian patent published in 2018 - IPC H02M7/162 

FIELD: electrical engineering.

SUBSTANCE: invention relates to converter equipment, in particular to multi-phase semiconductor rectifiers, and is applicable in DC power lines, as well as for powering a powerful industrial load, for example in metallurgy. Invention ensures the presence of twenty-four pulsations at the output and their symmetry, which is achieved due to additional phase shift between two transformers, when the primary spider winding is used in one of them, triangle in the other. Transformers have two secondary windings each with a ratio of the number of turns in them, approximately equal to the product of a natural number e (2.72) and the square root of two. Four rectifier bridges connected in series to the outputs of secondary windings, and uncontrollable (diode) bridges are connected to the windings with a large number of turns, and controlled bridges are connected to the windings with a small number of turns. Said bridges are combined in pairs with an equal number of turns, with the rectifier bridges being connected in pairs in parallel, and the pairs of bridges with each other – according to successively. Phase shift between transformers is achieved by turning on the primary winding of one of them in a triangle, the other in a star. Transformers differ from each other only in switching circuit of primary winding and presence of a phase shift in the output voltage.

EFFECT: main technical result achieved is a reduction in the required transformer windings turns number, corresponding reduction in weight and dimensions; there is also some improvement in electromagnetic compatibility of semiconductor rectifier due to the switching of the winding taps with significantly smaller number of turns.

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