FLIP-FLOP ON FIELD-EFFECT TRANSISTORS OF OPPOSITE CONDUCTIVITY TYPE Russian patent published in 2019 - IPC H03K17/00 

Abstract RU 2694152 C1

FIELD: radio engineering; electronics.

SUBSTANCE: invention relates to radio engineering, circuit engineering and industrial electronics. Trigger on field transistors of opposite conductivity type includes two field transistors with induced n-type and p-type channels, four resistors, capacitor and source of supplying direct voltage. First resistor is connected between output of supply constant voltage source and drain of first field transistor, one of outputs of second resistor is connected to source of this transistor, third resistor is connected between the second field transistor source and the common output of the first resistor and the DC supply source output, one of the outputs of the fourth resistor is connected to the drain of the second field-effect transistor, and the second output - with free output of second resistor, gate of first field transistor is connected to common output of fourth resistor and drain of second field transistor, and the gate of the second field transistor is connected to common output of the first resistor, capacitor and drain of the first field-effect transistor, output of flip-flop relative to "ground" forms common output of the second and fourth resistors.

EFFECT: increased load capacity of flip-flop.

1 cl, 1 dwg

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RU 2 694 152 C1

Authors

Peredelskij Gennadij Ivanovich

Dates

2019-07-09Published

2018-10-16Filed