HIGH-VOLTAGE VOLTAGE LEVEL CONVERTER Russian patent published in 2020 - IPC H03K19/94 

Abstract RU 2712422 C1

FIELD: computer engineering.

SUBSTANCE: invention relates to the computer engineering. Technical result is achieved due to circuit of High-voltage voltage level converter, which contains: seven P-type field-effect transistors (1–7) and seven N-type transistors (8–14), IN signal input, inputs of reference voltage sources VDD and VDD, inverse output , power supply terminals of high voltage level VCC and VDD and low voltage level VSS.

EFFECT: increased efficiency of digital CMOS of shift circuit.

1 cl, 1 dwg

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RU 2 712 422 C1

Authors

Shubin Vladimir Vladimirovich

Glukhov Aleksandr Viktorovich

Bykov Vladislav Mikhajlovich

Egorkin Andrej Vitalevich

Dates

2020-01-28Published

2019-02-26Filed