FIELD: computer equipment.
SUBSTANCE: radiation-resistant static random-access memory (RAM) on complementary metal-oxide-semiconductor transistors comprises blocks of address generators, units of buffer data generators, control circuit, output resolution circuit, two accumulators, two error detection and correction units, a block of address and control signal generators, wherein each accumulator is in form of a memory cell matrix and comprises units consisting of basic subblocks, which contain discharge sections of main discharges and discharge sections of control bits, which relate to different words and are structurally arranged such that bits of one word are spaced apart, sufficient to exclude multiple failures in bits of data bus related to one information word.
EFFECT: technical result consists in improvement of resistance to single faults.
4 cl, 2 dwg
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