RADIATION-RESISTANT MEMORY ELEMENT FOR STATIC RANDOM-ACCESS MEMORY DEVICES ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS Russian patent published in 2019 - IPC G11C11/40 H01L27/92 

FIELD: electronics.

SUBSTANCE: invention refers to the field of microelectronics. Radiation-resistant memory element for static random-access memory on complementary metal-oxide-semiconductor transistors has a p-type substrate and an n-type "pocket", active regions of n- and p-type trigger transistors and n-type control transistors, and additionally comprises contacts p+ and n+ to the substrate and "pocket" connected to buses of zero potential and supply respectively and located in each element of the memory matrix near the boundary between the substrate and "pocket", between adjacent memory elements of one line and between internal nodes of a trigger of memory element, wherein the channel length and width of the channel element of the memory element trigger of the n-channel and p-channel transistors are increased.

EFFECT: design of a radiation-resistant memory element for static random-access memory devices on complementary metal-oxide-semiconductor transistors with high resistance to external radiation factors.

1 cl, 4 dwg