RADIATION-RESISTANT ELEMENT OF MEMORY FOR STATIC OPERATIONAL MEMORIZING DEVICES ON COMPLIMENTARY METAL-OXIDE-SEMI-CONDUCTOR OF TRANSISTORS Russian patent published in 2018 - IPC G11C11/40 G11C5/04 

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering. Radiation-resistant memory element for static random access memory devices on complementary metal-oxide-semiconductor transistors contains a p-type substrate and n-type “pocket”, active areas of n-type and p-type trigger transistors, and n-type control transistors, and also additionally contains p+ and n+ contacts to the substrate and to the "pocket", connected to the tires of zero potential and power, respectively, and located in each element of the memory matrix near the boundary between the substrate and the "pocket", the length and width of the channel of the n-channel and p-channel transistors of the trigger of the memory element are increased, and the p-channel transistors of the trigger are made in the form of two parallel-connected transistors with a common p+ drain region.

EFFECT: technical result consists in the creation of a radiation-resistant memory element for static random-access memory devices on complementary metal-oxide-semiconductor transistors, made using the bulk silicon technology, with enhanced resistance to external radiation factors.

1 cl, 4 dwg