METHOD OF PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON Russian patent published in 2020 - IPC C01B33/03 C01B33/35 C30B28/14 C30B29/04 

Abstract RU 2739312 C2

FIELD: chemical or physical processes.

SUBSTANCE: invention relates to chemical technology of producing polycrystalline silicon by hydrogen reduction of trichlorosilane with hydrogen to silicon core bars in a waste-free mode. Method involves preparation of initial vapor-gas mixture in evaporator SiHCl3 1 by hydrogen bubbling through a layer of trichlorosilane with molar ratio H2:SiHCl3 = (3.0–3.5):1 with its further supply to reduction reactor 2, where polycrystalline silicon is deposited on heated to 1100–1150 °C silicon rods, supply of vapor-gas mixture recovery reactor 2, consisting of hydrogen, silicon tetrachloride, trichlorosilane and hydrogen chloride, into waste heat reactor 3, in which at temperature of 315–350 °C separation of hydrogen chloride from the vapor-gas mixture leaving reduction reactor 2 to obtain a mixture of hydrogen, trichlorosilane and silicon tetrachloride in ratio SiHCl3/SiCl4= 50 %/50 %, then obtained mixture is fed into membrane separation unit 4 for separation of hydrogen on polymer membranes at heating temperature of up to 100 °C and pressure drop of 8 atm, which is returned to the evaporator of SiHCl3 1, and mixture of trichlorosilane and silicon tetrachloride is subjected to condensation 5 and rectification 6, after which trichlorosilane is returned to the evaporator of SiHCl3 1, and silicon tetrachloride is supplied to the evaporator of SiCl4 7, in which hydrogen is bubbled through a layer of silicon tetrachloride to form a vapor-gas mixture with molar ratio H2:SiCl4 = (3.0–6.5):1, which is then fed into plasma-chemical reactor 8 for synthesis of trichlorosilane, wherefrom a gas-vapor mixture consisting of hydrogen, silicon tetrachloride, trichlorosilane and hydrogen chloride, is directed to a waste heat reactor 3 for separation of hydrogen chloride. Therefore, all components are used in production without generation of wastes or emissions into atmosphere.

EFFECT: result is reduced power consumption, increased quality of silicon, environmental safety, reduced consumption of reagents per unit of production.

3 cl, 1 dwg, 1 ex

Similar patents RU2739312C2

Title Year Author Number
METHOD OF PRODUCING POLYCRYSTALLINE SILICON 2011
  • Timerbulatov Timur Rafkatovich
  • Pinov Akhsarbek Borisovich
  • Gavrilov Petr Mikhajlovich
  • Prochankin Aleksandr Petrovich
  • Muravitskij Stepan Aleksandrovich
  • Vojnov Oleg Georgievich
  • Bolgov Mikhail Viktorovich
RU2475451C1
METHOD OF PRODUCTION OF POLYCRYSTALLINE SILICON 2004
  • Ivanov Leonard Stepanovich
  • Levin Vladimir Grigor'Evich
  • Nazarkin Denis Vladimirovich
  • Eljutin Aleksandr Vjacheslavovich
  • Kharchenko Vjacheslav Aleksandrovich
RU2278075C2
POLYCRYSTALLINE SILICON PRODUCTION PROCESS 1998
  • Bochkarev Eh.P.
  • Eljutin A.V.
  • Ivanov L.S.
  • Levin V.G.
RU2136590C1
METHOD OF PRODUCING CHLOROSILANES FROM AMORPHOUS SILICA TO PRODUCE HIGH PURITY SILICON 2017
  • Novotortsev Roman Yurevich
  • Savilov Sergej Vyacheslavovich
  • Efisko Oleg Olegovich
  • Ivanov Anton Sergeevich
  • Efremova Olga Sergeevna
  • Shumyantsev Aleksej Viktorovich
RU2637690C1
METHOD OF OBTAINING POLYCRYSTALLINE SILICON 2018
  • Kokh Aleksandr Arkadevich
  • Mitin Vladimir Vasilevich
  • Ostvald Evgenij Vladimirovich
  • Pinov Akhsarbek Borisovich
RU2674955C1
TRICHLOROSILANE PRODUCTION PROCESS 2004
  • Ivanov Leonard Stepanovich
  • Levin Vladimir Grigor'Evich
  • Nazarkin Denis Vladimirovich
  • Mitin Vladimir Vasil'Evich
  • Eljutin Aleksandr Vjacheslavovich
  • Kharchenko Vjacheslav Aleksandrovich
RU2274602C1
METHOD OF OBTAINING POLYCRYSTALLINE SILICON 2007
  • Muravitskij Stepan Aleksandrovich
  • Gavrilov Petr Mikhajlovich
  • Revenko Jurij Aleksandrovich
  • Gromov Gennadij Nikolaevich
  • Levinskij Aleksandr Ivanovich
  • Prochankin Aleksandr Petrovich
  • Ryzhenkov Sergej Vladimirovich
RU2342320C2
METHOD OF PRODUCING SILICON CARBIDE LAYERS 1993
  • Ivanov L.S.
  • Chernikov G.E.
RU2087416C1
METHOD OF PRODUCING POLYCRYSTALLINE SILICON IN CLOSED CIRCUIT 1997
  • Prokhorov A.M.
  • Petrov G.N.
  • Zhirkov M.S.
  • Fadeev L.L.
RU2122971C1
POLYCRYSTALLINE SILICON PROCESS 2007
  • Gavrilov Petr Mikhajlovich
  • Revenko Jurij Aleksandrovich
  • Muravitskij Stepan Aleksandrovich
  • Gromov Gennadij Nikolaevich
  • Bolgov Mikhail Viktorovich
  • Levinskij Aleksandr Ivanovich
  • Gushchin Vladimir Vasil'Evich
  • Prochankin Aleksandr Petrovich
RU2357923C2

RU 2 739 312 C2

Authors

Sennikov Petr Gennadevich

Kornev Roman Alekseevich

Nazarov Vladimir Viktorovich

Dates

2020-12-22Published

2018-10-23Filed