METHOD OF PRODUCING SILICON CARBIDE LAYERS Russian patent published in 1997 - IPC

FIELD: production of inorganic materials. SUBSTANCE: invention relates to process of depositing high-purity stoichiometric silicon carbide with theoretical density. Method includes purifying initial compositions and feeding vapor-gas methyltrichlorosilane-hydrogen mixture into reactor, decomposing it on a heated carrier to yield silicon carbide and decomposition products. According to invention, vapor-gas mixture fed into reactor has density 3-4 g/sq.cm and methyltrichlorosilane to hydrogen molar ratio 1:(1-3), whereas carrier temperature is 1200-1250 C. Decomposition products are withdrawn from reactor, separated via condensation into gas and liquid phases. Liquid phase is by gravity directed into rectification stage. Isolated methyltrichlorosilane is returned into reactor. Condensation of liquid phase is carried out at temperature from -70 to -75 C or when varying temperature from 0 to - 120 C with successive isolation of methyltrichlorosilane, other organochlorosilanes, and chlorosilanes from liquid phase. After rectification, organochlorosilanes are combined with methyltrichlorosilane and returned into process, whereas gas phase, after condensation, containing hydrogen chloride, methane, and hydrogen is cooled to temperature from -185 to -196 C, which leads to hydrogen chloride and methane separation in the form of solid precipitate. Hydrogen is compressed and returned into process. Application of thus obtained silicon carbide in microelectronics will allow essentially increasing quality of very large scale integrated circuits. EFFECT: increased purity of product. 6 cl, 1 tbl