METHOD FOR OBTAINING A MATERIAL OF HIGH THERMAL CONDUCTIVITY AND A HEAT SINK MADE OF A MATERIAL OBTAINED BY THIS METHOD Russian patent published in 2021 - IPC C01B32/28 C30B33/04 C30B29/04 H01L23/373 

FIELD: material engineering.

SUBSTANCE: invention relates to the technology of producing a material of high thermal conductivity by post-processing monocrystals of diamond. The method is characterized by the fact that a diamond of type Ib, or Ib+Ia, or Ia+Ib is artificially synthesized by the high pressures and high temperatures (HPHT) method with an initial concentration in the crystal lattice of single isolated nitrogen atoms in the substitution position (defects C) in the range from 1.76⋅10¹⁸ cm^-3 to 1.4⋅10²⁰ cm^-3, and then it is irradiated with electrons with an energy from 1 to 5 MeV and an irradiation dose from 1⋅10¹⁸ to 1⋅10¹⁹ cm^-2, that causes the recharge of a part of the formed single isolated vacancies from the neutral to the negative charge state and provides an increase in the thermal conductivity of the diamond at temperatures in the range of 300-340 K.

EFFECT: expansion of the range of heat-conductive materials.

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