FIELD: chemistry.
SUBSTANCE: invention can be used in obtaining jewellery diamonds. method of introduction of NV-centres in monocrystalline CVD-diamond material includes the following stages: irradiation of CVD-diamond material, containing single substituting nitrogen, for introduction of isolated vacancies in concentration at least 0.05 ppm and at most 1 ppm; annealing irradiated diamond to form NV-centres from at least some of defects of single substituting nitrogen and introduced isolated vacancies.
EFFECT: invention makes it possible to obtain pink CVD-diamond material and CVD-diamond material with spintronic properties.
18 cl, 12 tbl, 7 dwg
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