FIELD: power electronics.
SUBSTANCE: invention relates to the field of power electronics, in particular, to interface devices between digital devices with power MOS (Metal - Oxide - Semiconductor) or IGBT (IGBT - insulated gate bipolar transistors) transistors. The driver is designed to control power transistors in electronic equipment with high levels of electromagnetic interference or high requirements for reliability, as well as with a significant length of communication lines through which control signals are sent to the driver. A distinctive feature of the driver is the control of its operation with the help of two external independent paraphase signals coming through separate communication lines. Formation of the output signal of the driver to turn on or turn off the external power transistor is based on a logical analysis of the state of both input control signals with different priority levels.
EFFECT: high noise immunity, safety and reliability, while expanding the scope.
1 cl, 1 dwg
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