IGBT TRANSISTOR DRIVER Russian patent published in 2023 - IPC H02M1/08 H03K17/567 

Abstract RU 2791087 C1

FIELD: converter equipment.

SUBSTANCE: present invention relates to converter equipment; it can be used for control of IGBT transistor, including a power IGBT transistor. A driver contains a power supply source, a logic unit, a saturation protection unit, an output amplifier, an under-voltage protection unit, an overheating protection unit. For provision of protection of power IGBT transistors in overload and load short circuit, the driver additionally includes RC circuit, a support voltage source, a gate-emitter of the controlled IGBT transistor, equal to threshold voltage, a voltage comparator with an open collector output, a shunting resistor, a current-limiting resistor, Zener diodes.

EFFECT: provision of protection of power IGBT transistors in overload and load short circuit.

1 cl, 2 dwg

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RU 2 791 087 C1

Authors

Minaev Gennadij Mikhajlovich

Artaev Nikolaj Aleksandrovich

Dates

2023-03-02Published

2021-11-08Filed