METHOD FOR MEASURING ANISOTROPIC REFLECTION SPECTRUM OF SEMICONDUCTOR MATERIALS AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2023 - IPC G01J3/447 G01N21/47 

FIELD: instrumentation.

SUBSTANCE: concerns a method for measuring the anisotropic reflection spectrum of semiconductor materials. When implementing the method, broadband optical radiation is directed at the sample under study and the direction of its linear polarization is rotated, the reflected radiation is detected, and the interferogram of the reflected radiation is measured. The reflected beam is synchronously detected at the rotation frequency of the linear polarization plane, the reflection spectrum R is obtained from the interferogram of the reflected radiation, and the phase error spectrum of the interferogram of the reflection spectrum R is determined. The interferogram of the photomodulation component of the reflected radiation is measured. Using the Fourier transform and taking into account the previously determined phase error, an unnormalized modulation reflection spectrum is obtained from the interferogram of the photomodulation component of the reflected radiation ΔR. The normalized anisotropic reflection spectrum is defined as the ratio of the modulation reflection spectrum and the ordinary reflection spectrum ΔR/R.

EFFECT: providing the possibility of recording and processing anisotropic reflection spectra of semiconductors in a wide optical range.

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