MATRIX ACCUMULATOR FOR READ-ONLY MEMORY UNIT Russian patent published in 1997 - IPC

FIELD: computer engineering. SUBSTANCE: device has first-type semiconductor substrate with recesses, first group of second-type bit diffusion lines which are located near to surface of substrate. In addition first-type diffusion layer is located between diffusion lines in recesses of first-type semiconductor substrate which is covered with first dielectric layer with holes in which second dielectric layer is located. Second dielectric layer is covered with third dielectric layer and is connected to polysilicon electrodes. Surface of first and third dielectric layers is connected to first group of address conducting lines. Polysilicon electrodes are covered with fourth dielectric layer on which surface second group of address conducting lines is located over polysilicon electrodes between address polysilicon lines of first group. In addition device has fifth dielectric layer and second group of bit conducting layers, sixth and seventh dielectric layers. Bit conducting lines of second group are diffusion, have second type of conductance and are located in parallel to bit conducting lines of first group; address conducting lines of first group have flanges and are located in perpendicular to bit diffusion lines of first and second groups. Fifth dielectric layer is located on surface of address conducting lines of first group; sixth dielectric layer is located on surface of ends of flanges of fifth dielectric layer; seventh dielectric layer is located on surface of first, third, fifth and sixth dielectric layers. Holes of seventh dielectric layer match holes in first dielectric layer. Another claim of invention describes device design in which fifth and sixth dielectric layers are made from silicon dioxide which depth in fifth layer is by 5-10 times greater than depth of second dielectric layer and depth of sixth layer is by 10 times less than depth of second dielectric layer. EFFECT: increased density. 2 cl