STORAGE CIRCUIT FOR PERMANENT STORAGE Russian patent published in 1994 - IPC

Abstract SU 1436735 A3

FIELD: computer engineering. SUBSTANCE: fourth diffusion region of first type of conductance with dope concentration 10¹⁴-5·10¹⁵cm^-3 is injected into layer close to surface of semiconductor substrate. Inclusion of this region leads to decrease of threshold voltage. Chosen concentration provides for symmetry of characteristics, i.e. for equal values of threshold voltages "0" and "1". EFFECT: enhanced reliability of storage circuit due to reduction of probability of single failures when re-programming. 5 dwg

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SU 1 436 735 A3

Authors

Kolker B.I.

Krjukov S.V.

Dates

1994-12-30—Published

1987-03-05—Filed