PROCESS OF MANUFACTURE OF CRYSTAL WITH DIFFUSION P - N JUNCTION Russian patent published in 1994 - IPC

Abstract RU 2008746 C1

FIELD: electronics. SUBSTANCE: crystal in the form of hexahedron is chamfered to shape of truncated cone. Value of side chamfer is checked by diameter of upper pad. EFFECT: facilitated manufacture, reduced labour input. 1 dwg

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RU 2 008 746 C1

Authors

Al'Tman I.R.

Shmitkin O.M.

Livshits D.L.

Kandov A.M.

Kaplan A.A.

Dates

1994-02-28—Published

1991-10-18—Filed