FIELD: semiconductor engineering. SUBSTANCE: prior to welding, crystal coated with alloy of SnxPb1-x (0,02 ≅ x ≅ 0,2) composition is annealed in H2 atmosphere at Tatm≥ Tl(x)+(60-70°C + (60-70 C) for 0.5 h or longer. Here, Tl(x) is temperature of removal of solder of respective composition. EFFECT: facilitated procedure. 3 dwg
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