PROCESS OF MANUFACTURE OF PLANAR P - N JUNCTIONS ON INAS CRYSTALS OF N-TYPE CONDUCTIVITY Russian patent published in 1995 - IPC

FIELD: semiconductor devices. SUBSTANCE: process of manufacture of planar P⁺-N junction of InAs crystals of n-type conductivity is based on method of ion implantation followed by firing. Epitaxial films or plates cur from ingots and ground without use of diamond powders are used as starting crystals. Implantation is conducted with ions of beryllium with energy 30-100 keV and dose 10¹³-3·10¹⁴cm^-2. After firing at 550-600 C surface is protected by formation of film of anode oxide in electrolyte based on tartaric acid, ethyleneglycol and ammonium fluoride under galvanostatic mode at current density 0,5-1 mA·сm^-2 followed by application of passivating dielectric film. EFFECT: expanded application field of junction manufactured in agreement with this process. 1 tbl