OUTPUT INTEGRATED MIS INVERTER Russian patent published in 1994 - IPC

FIELD: integrated electronics. SUBSTANCE: inverter has four MIS transistors with induced n-type channel. Gate and drain of first transistor are connected to power supply terminal and to drain of second transistor; gate of the latter is connected to source of first MIS transistor and to drain of third MIS transistor whose gate is connected to input terminal and gate of fourth transistor whose source is connected to common bus and its drain, to source of second transistor and to output terminal of inverter. Gate of second transistor is connected to its substrate and source of third transistor is connected to substrate of fourth transistor. EFFECT: improved design. 2 dwg