SINE OSCILLATOR Russian patent published in 1994 - IPC

Abstract RU 2012124 C1

FIELD: radio engineering. SUBSTANCE: oscillator has active portion 1, which includes field transistor 2, the first bipolar transistor 3 and the first resistor 4, bipolar transistor 5, the second resistor 6, capacitors 7 and 13, common bus 8, inductance coil 9, power supply bus 10, output bus 11, the third resistor 12. EFFECT: higher oscillator efficiency. 1 dwg

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RU 2 012 124 C1

Authors

Il'In O.P.

Dates

1994-04-30—Published

1991-03-05—Filed