HIGH VOLTAGE ELECTRONIC KEY Russian patent published in 2022 - IPC H03K17/687 

FIELD: electronic engineering.

SUBSTANCE: invention relates to electronic engineering. To achieve the effect, a high-voltage electronic switch is proposed, containing one field-effect transistor, the sample under study is connected to the drain circuit, and a reference resistance is included in the source circuit, the voltage on which determines the current strength through the sample, and a capacitor is additionally connected to the output of the power source to ensure the stability of the values and eliminating distortion of current pulses, and the source of the control pulse voltage through the resistor is connected to the gate of the transistor, while between the common point of the resistor-gate of the transistor and the common bus, an additionally introduced zener diode is connected, which limits the amplitude of the control voltage at the gate of the transistor, to reduce the effect of the gate capacitance - drain and distortion of the trailing edges of rectangular pulses, a second resistor is connected in parallel with the zener diode.

EFFECT: simplification of the device, exclusion of the operation of measuring instruments under high voltage and heating of the samples under study in a wide range of electric field strengths.

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