FIELD: measurement technology. SUBSTANCE: device has semiconductor membrane, which has stiffening ribs on its ends. The first dielectric layer is applied onto the face side of the membrane. Thin-film heat resistor with film conductors is formed above the layer. The second dielectric layer is applied onto these elements. Gas-sensitive thin-film resistor is formed onto the second layer of dielectric, as well as supply conductors. Moreover, film catalyst is formed above gas-sensitive thin-film resistor. Two film supply conductors of heat thin-film resistor are connected with circuit for controlling heat thin-film resistor. Two supply conductors of gas-sensitive thin-film resistor are connected with measuring bridge, which has three resistors, one which is connected to voltage divider together, with gas-sensitive resistor and two others are connected with reference frequency divider. Both dividers have common points of supply, which are connected to the bridge through current limiter. Diagonal of the bridge (average points of voltage divider) is connected to inputs of amplifier, which has output connected to indicator. Measuring bridge is formed above the second dielectric layer, in such a manner, that all three its resistors have to be thin-film resistors, made together with gas-sensitive thin-film resistors of the same material, and has the same sizes. Film catalyst is applied upon the resistors, made of the same material and having the same sizes as the catalyst in gas-sensitive resistor. Three resistors of the bridge are located onto heat thin-film resistor onto the second dielectric layer. Resistors of the bridge are closed by gas-proof mask, made in form of rectangular film, which has a window, coinciding the topology of gas-sensitive thin-film resistor, disposed above the latter one. EFFECT: improved precision of measurements. 5 dwg
