FIELD: measurement technology. SUBSTANCE: device is designed to measure concentration of gas components, it can be used in systems of control over boiler rooms of thermal power stations to monitor environmental conditions. Device includes silicon substrate with first layer of dielectric of silicon dioxide deposited on its face surface, heating resistor from doped polycrystalline silicon formed on it, second layer of silicon dioxide formed above it and third layer of silicon nitride put on it. Two gas-sensitive thin-film resistors made of tin dioxide are formed on third dielectric layer within bounds of area of heating resistor. Catalityc layer of silicon dioxide with uniformly distributed palladium oxide is formed on surface of the first resistor and catalytic layer of silicon dioxide with uniformly distributed manganese dioxide is formed on surface of second resistor. Content of palladium oxide in catalytic layer on surface of first gas-sensitive resistor amounts to 1.0-5.0 per cent by volume and content of manganese dioxide in catalytic layer on surface of second gas-sensitive resistor is 5.0-10.0 per cent by volume. Technical result consists in provision of selectivity and authenticity of determination of concentration of each component in oxido-reduction gas mixture, for instance, O2-CO, O2-CO2, O2CH4, NOx-CH4 and so on. EFFECT: improved selectivity and authenticity of determination of concentration of components in gas mixture. 1 cl, 6 dwg
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Authors
Dates
2002-09-10—Published
2000-04-19—Filed