METHOD OF PRODUCING SHAPED PEAT WAFERS Russian patent published in 1994 - IPC

FIELD: farming. SUBSTANCE: method involves preparation of peat mass, its forming and drying at 80-100 C concurrently with electric pulse machining by field of high-frequency current, followed by gradual reduction of field pulse period-to-pulse duration ratio from 10 to 3 at pulse repetition period of 15-45 s until humidity of wafers is not reduced to 70-75 per cent. Then, temperature of heat-transfer medium is increased to 230-250 C and at same time electric intensity component of field of high-frequency currents is reduced by 2-4 times. Outlet temperature of heat-transfer medium is gradually decreased to 30-40 C. EFFECT: modified production process of shaped peat wafers. 5 tbl