SEMICONDUCTOR S H F DEVICE Russian patent published in 1994 - IPC

FIELD: radio engineering. SUBSTANCE: semiconductor SHF device - attenuator includes section of rectangular waveguide which wide walls carry first metal combs 2, 3 of wedge shape in cross-section, slit line 4 put between combs in E plane of section of rectangular waveguide on its symmetry axis. Slit line includes p-i-n diodes 5 located at distance λ_v/4 from each other. Matching junctions are made at input and output of device. Narrow walls of section of waveguide carry second metal truncated combs 7, 8 which side walls are parallel to nearest side of first combs 2, 3. Length of second metal combs 7, 8 equals length of first combs 2, 3. Clearance between truncated vertexes of second combs 7, 8 amounts to not more than λ_v/4, and distance between opposite sides of first combs is not less than λ_v/20.. Matching junctions include one-two quarter-wavelength sections of waveguide containing truncated wedge-shaped metal combs over their wide walls forming steps over height of combs and steps over width of waveguide. In this case side surfaces of these combs coincide with proper sides first combs 2, 3. EFFECT: expanded application field. 2 cl, 3 dwg