METHOD AND DEVICE FOR AMPLITUDE AND PHASE MODULATION OF MICROWAVE SIGNAL Russian patent published in 2004 - IPC

Abstract RU 2236724 C1

FIELD: radio engineering; amplitude and phase modulation in various microwave metering, transmitting , and receiving channels, and newly developed radars.

SUBSTANCE: proposed method intended for shaping composite signals, such as those for exciting TEM waves, and for modulating microwave signal involves digital change-over of bias voltage across two groups of control semiconductor devices carrying H10 wave passed from rectangular waveguide to excite TEM wave above or below central conductor of symmetrical strip lone of output waveguide using natural difference in structures of electromagnetic waves and symmetrical strip line for phase inversion by digital reversal of bias voltage polarities across two groups of semiconductor control devices. Digital modulation is effected by gradually and discretely varying bias voltage across one of groups of semiconductor control devices. Device implementing proposes method has rectangular input waveguide, slit diaphragm with resonance-tuned coupling centers, and semiconductor control devices symmetrically disposed on both ends of resonance-tuned coupling centers. Slit diaphragm is installed at joint between coaxially arranged rectangular waveguide and symmetrical strip line disposed in matching waveguide of length l (0.25 - 0.5) and in rectangular waveguide. Central conductor of symmetrical strip line is connected to center of slit diaphragm that symmetrically divides resonance-tuned coupling centers either side of the latter, wide wall of output waveguide being reduced in steps from matching waveguide to where a and b are wide and narrow walls of output waveguide, respectively; and are wavelengths in free space and in matching waveguide, respectively; is substrate thickness; is dielectric constant of substrate. Resonance-tuned coupling centers of slit diaphragm are provided with depressions accommodating dielectric wafers with contact pads; side contact pads are coupled with unipolar electrodes of semiconductor control devices and connected to slit diaphragm body and central one, to second inputs of semiconductor control devices and to control device.

EFFECT: provision for simultaneous phase and amplitude modulation across one control component; elimination of phase errors and reduction of insertion loss.

3 cl, 5 dwg

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RU 2 236 724 C1

Authors

Lapshin V.I.

Sinani A.I.

Dates

2004-09-20Published

2003-06-24Filed