FIELD: electronics. SUBSTANCE: this process is developed for manufacture of high-power semiconductor lasers. Process involves manufacture of plate of gallium arsenide, making of optical resonator composed of two mirrors. Dummy mirror of resonator is fabricated on surface of plate perpendicular to crystallographic direction III by etching of surface in boiling mixture of nitric and hydrochloric acids with proportion 3:1 for 3-5 min. Function of output mirror is performed by multilayer dielectric coating or by natural surface of plate. EFFECT: facilitated manufacture, reduced labour input. 1 tbl
Title | Year | Author | Number |
---|---|---|---|
PROCESS OF MANUFACTURE OF SEMICONDUCTOR LASER WITH PUMPING WITH ELECTRON BEAM | 1991 |
|
RU2017267C1 |
METHOD OF MANUFACTURE OF SEMICONDUCTOR LASER WITH ELECTRON BEAM PUMPING | 1991 |
|
RU2013837C1 |
SEMICONDUCTOR LASER WITH ELECTRON BEAM PUMPING AND PROCESS OF ITS MANUFACTURE | 1989 |
|
SU1653514A1 |
SEMICONDUCTOR LASER | 0 |
|
SU1622913A1 |
PROCESS OF MANUFACTURE OF LASER TARGET OF CATHODE-RAY TUBE ON BASE OF MONOCRYSTAL OF SEMICONDUCTOR OF A 002B - 006 TYPE | 1992 |
|
RU2032242C1 |
METHOD OF MAKING PHOTOCATHODE AND APPARATUS FOR MAKING PHOTOCATHODE | 2012 |
|
RU2502151C1 |
ELECTRON-BEAM PUMPED SEMICONDUCTOR LASER | 2000 |
|
RU2191453C2 |
OPTICAL DEVICE | 1996 |
|
RU2153746C2 |
FUNCTIONAL ELEMENT OF A QUANTUM EMITTER | 2021 |
|
RU2781531C1 |
METHOD OF DETERMINING ORIENTATION OF SEMICONDUCTOR CRYSTALS | 0 |
|
SU1822944A1 |
Authors
Dates
1994-07-30—Published
1991-09-17—Filed