FIELD: manufacture of laser cathode-ray tubes. SUBSTANCE: chemical and mechanical polishing of first surface of starting semiconductor plate is conducted. Heterostructure composed of monocrystal film of direct-gap semiconductor of A2B6, type grown on substrate of semiconductor of A3B5, type is used as starting plate. Output mirror is applied and heterostructure is anchored on cooling agent line. Then substrate of semiconductor of A3B5 type is removed by method of selective chemical pickling, for instance with aqueous solution of H2O2 and NH4OH. Surface of monocrystal film of A3B5 semiconductor contacting A2B6 semiconductor substrate is polished by chemical method and dummy mirror in the form of reflecting coat is applied on it. EFFECT: facilitated manufacture of laser targets. 3 cl, 1 dwg
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Authors
Dates
1995-03-27—Published
1992-08-27—Filed