ELECTRON-BEAM PUMPED SEMICONDUCTOR LASER Russian patent published in 2002 - IPC

FIELD: quantum electronics for data transmission and display devices (television sets, printers, and the like). SUBSTANCE: laser target is made in the form of substrate transparent for generated radiation that carries microchips grown thereon in definite sequence from A₂B₆ or A₃B₅ compounds. They form array of semiconductor microcavities excited by electron beam. Bragg s mirrors and metal cover on incident electron beam side are employed. Cathode is made in the form of array of autoemission points with control grid. Proposed laser has reduced thresholds at T = 300 K. EFFECT: reduced active area diameter, enhanced degradation speed. 7 cl, 3 dwg