MEMORY Russian patent published in 1994 - IPC

Abstract RU 2018979 C1

FIELD: memories. SUBSTANCE: proposed invention consists in changes of connections of transistors with the purpose to increase logical differences in readout mode and to exclude influence of transients upon memory access delay. In addition to mentioned components, the device has also several resistors. EFFECT: improved speed of response and noise immunity of memory. 3 dwg

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RU 2 018 979 C1

Authors

Ignat'Ev S.M.

Dates

1994-08-30—Published

1991-04-22—Filed