CMOS GATE LEVEL CONVERTER Russian patent published in 1997 - IPC

FIELD: electronics. SUBSTANCE: goal of invention is achieved by introduction of first and second bias elements 19 and 20 and new functional connections. This results in possibility to implement method for forced control of active p- and n-channel field-effect transistors 13-16 when transistors are effected simultaneously through source and gate terminals. In addition device has current switch 1, current source 2, load resistor 3 and 4, bipolar communication n-p-n transistors 5 and 6, gate bipolar n-p-n transistors 7 and 8, device direct and inverting inputs 9 and 10, output circuit 12, n-channel dynamic load field- effect transistors 17, 18, inverting and direct device outputs 21 and 22, positive and negative power supply voltage lines 11 and 23. EFFECT: increased speed. 3 cl, 3 dwg