METHOD OF PREPARING OF GALLIUM ORTHO-PHOSPHATE MONOCRYSTALS Russian patent published in 1994 - IPC

FIELD: electromechanical transducers. SUBSTANCE: initial charge is prepared from a mixture Ga₂O₃ and NH₄H₂PO₄ which are taken at the ratio (1: 0-(1:2) and roasted at 700-800 C. Then from the solution of charge prepared in concentrated ortho-phosphoric acid at 400-450 C, under pressure of inert gas 75-100 atm and at direct temperature difference gallium ortho-phosphate monocrystals are grown hydrothermally. Crystals prepared show optically ideal ones with stable piezo-properties at the high temperatures. EFFECT: improved method of monocrystals preparing. 3 dwg