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2 186 884

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Application

2000125075/12, 2000-10-06

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Start date

2000-10-06

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Actual filing date

2000-10-06

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Published

2002-08-10

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Inventor

Motchanyj A.I.Shvanskij P.P.Dorogovin B.A.

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Nauchno-Issledovatel'Skij Institut Sinteza Mineral'Nogo Syr'Ja"

HYDROTHERMAL METHOD FOR GROWING LARGE-SIZE CRYSTALS OF ALUMINUM AND GALLIUM OTHOPHOSPHATES Russian patent published in 2002 - IPC

Abstract RU 2186884 C2

FIELD: crystal growing. SUBSTANCE: flaw-free large-size crystals of aluminum and gallium othophosphates that can be used in piezoelectric engineering, in particular in resonators and various-destination filters, are grown by a method including: epitaxial growth process on basis- orientation quartz seed crystal from phosphoric acid solution saturated with corresponding metal ions in presence of 0.05 to 10.0% lithium ion at increasing temperature and constant temperature gradient, preparation of seed plate from thus obtained layer and recrystallization of said plate from sulfuric acid, phosphoric acid solutions or their mixture to give blend corresponding to given crystal. EFFECT: improved quality of crystals. 1 tbl

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RU 2 186 884 C2

Authors

Motchanyj A.I.

Shvanskij P.P.

Dorogovin B.A.

Dates

2002-08-10—Published

2000-10-06—Filed

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