FIELD: electronic engineering. SUBSTANCE: essence of this method resides in successively applying to metal base layer two coats of photopolymerizing compositions (in order of succession) including 1.00 part by mass butylmethacrylate-methacrylic acid copolymer containing 23 % methacrylic acid, 0.6 to 0.8 parts by mass oligoetheracrylate, 0.015 to 0.025 parts by mass phenanthrenequinone, 0.008 to 0.012 parts by mass crystalline violet dye, 1.00 part by mass butylmethacrylate-methacrylic acid copolymer containing 23 % methacrylic acid, 1.0 to 1.2 parts by mass oligoetheracrylate, 0.15 to 0.25 parts by mass iso-butyl ether of gum benzoin, 0.0013 to 0.0017 parts by mass 3,5-di-tret-butylbenzoquinone-1,2, and 0.008 to 0.012 parts by mass rhodamine. Disclosed method prescribes conducting exposure to light in two phases, first, exposing lower coat to light having wavelength of 400 to 450 nm via patterned phototemplet and then exposing upper coat to light having wavelength of 320 to 450 nm using patterned phototemplet and finally simultaneously developing both coats of photoresist material. EFFECT: more sophisticated technique. 3 dwg, 1 tbl
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PHOTO-POLYMERIZING COMPOSITION FOR DRY FILM PHOTORESISTOR | 1985 |
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PHTOPOLYMERIZING COMPOSITION | 0 |
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SU996984A1 |
Authors
Dates
1994-10-15—Published
1991-03-19—Filed