FIELD: technique of crystal growing by Chrochralsky method in automatic mode. SUBSTANCE: method comprises steps of inserting a plate to a melt, the plate being parallel with a surface of the melt, and performing an additional compensation by locally changing temperature under crystallization front (Tp-channel); changing the temperature under the crystallization front by changing an intensity of current, being passed through the plate, or/and by changing a position of the plate relative to the surface of the melt. At the case of temperature changing due to controlling the intensity of current, the plate is made of current-conductive material and some contacts are secured to it for joining with a source of current. EFFECT: enhanced efficiency. 1 cl, 1 dwg
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Authors
Dates
1994-11-15—Published
1990-07-09—Filed