DEVICE FOR CONTINUOUS GROWING OF ORIENTED LAYERS OF SILICON ON A CARBON FABRIC Russian patent published in 2005 - IPC

Abstract RU 2264483 C1

FIELD: devices for growing from a melt of polycrystalline layers of silicon used for production of solar sells.

SUBSTANCE: the invention is pertaining to the field of growing from a melt of polycrystalline layers of silicon and may find application in production of solar cells (photoconverters). The substance of the invention: the device includes a crucible for a melt, a heater, a substrate linked with the gear of its relocation and a capillary feeding mechanism. The substrate is made out of a carbon reticular fabric, the heater consists of two sections of heating: a square section, inside which the crucible is mounted, and a right-angled section located above the substrate. At that the cross-section of the heater components is selected so, that the section of heating of the crucible is overheated in respect to the section of heating of the substrate. For a capillary feeding of the melt of silicon from the crucible use harnesses made out of a carbon filament spooled on a tail-end of the feeding mechanism. For replenishment of the level of the melt in the crucible use a vibrofeeder to feed the crushed silicon. The technical result of the invention is an increased productivity of the device and formation of conditions for production of the orientated coarse-crystalline structure of a silicon layer on the substrate naturally open for making of the rear electrical contact.

EFFECT: the invention ensures an increased productivity of the device, production of the orientated coarse-crystalline structures of the silicon layers on the substrates.

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RU 2 264 483 C1

Authors

Brantov S.K.

Kveder V.V.

Kuznetsov N.N.

Porkhunov E.V.

Dates

2005-11-20Published

2004-09-01Filed