CHARGE-COUPLED DEVICE Russian patent published in 1994 - IPC

FIELD: electronics. SUBSTANCE: charge-coupled device can find use in registers, delay lines, filters, multiplexers and other integrated circuits acting on principle of transfer of charge in semiconductor. It has output electrode, source follower and wire connecting output electrode with input of source follower located on semiconductor substrate. Under connecting wire there is positioned shielding electrode insulated from connecting wire and semiconductor substrate and linked to output of source follower and which follows shape of connecting wire. On semiconductor substrate contour of shielding electrode protrudes beyond contour of connecting wire by not less than 2.5 μm. If charge-coupled device has reset transistor which source is coupled with additional wire to connecting wire then shielding electrode is insulated from additional wire and follows shape of additional wire. In this case contour of shielding electrode on semiconductor substrate protrudes beyond contour of additional wire by not less than 2.5 μm. EFFECT: facilitated manufacture. 2 cl, 5 dwg