FIELD: photoelectric transducers. SUBSTANCE: device has semiconductor substrate with three-dimensional charge carrier channel, insulating layer, and outlet electrode. Connected to the latter directly or through transistor switch is additional electrode placed on same insulating layer. Introduced into semiconductor substrate, under additional electrode, is diffusion area of polarity opposite to that of substrate at alloying admixture thickness and concentration same as in three-dimensional charge carrier channel; diffusion area has separate lead; additional electrode is placed inside diffusion area circuit. EFFECT: provision for stepless control of conversion of read-out signals into output voltage. 2 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
CHARGE-COUPLED DEVICE | 1991 |
|
RU2023330C1 |
READING SET BASED ON CHARGE-COUPLED DEVICES FOR TWO-DIMENSION IMAGE RECEIVERS | 1993 |
|
RU2054753C1 |
CHARGE COUPLED DEVICE FOR AUTOFOCUSING IMAGES | 0 |
|
SU1569790A1 |
DEVICE FOR SIGNAL INPUT IN CHARGE-COUPLED DEVICES | 1979 |
|
SU795343A1 |
REEDER OF CHARGE-COUPLED DEVICE | 1981 |
|
SU1009249A1 |
MULTI-CHANNEL DEVICE FOR READING OUT OF CHARGE-COUPLED DEVICE | 1982 |
|
SU1044204A1 |
STORAGE CELL | 0 |
|
SU752476A1 |
0 |
|
SU1778823A1 | |
PLANAR POWER MOS TRANSISTOR WITH SCHOTTKY BARRIER FOR SUPPRESSING DRAIN CAPACITANCE | 2002 |
|
RU2229758C1 |
READER BASED ON CHARGE-COUPLED DEVICES | 1989 |
|
SU1625292A1 |
Authors
Dates
1995-11-27—Published
1991-06-03—Filed