FIELD: electronics. SUBSTANCE: process is developed for manufacture of semiconductor device. Treated substrate is exposed to radiation of wave range 115-180 nm SFSF6 or its mixtures with 0O2 or/and HH2 are used as working gas. EFFECT: increased speed of photostimulated etching of silicon dioxide with use of noncorrosive and nontoxic gases. 3 cl
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|---|---|---|---|
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