FIELD: microelectronics.
SUBSTANCE: proposed method that can be used for photolytic etching of wafers in the course of manufacture of very large-scale integrated circuit includes etching of SiO2 surface in sulfur hexafluoride under action of vacuum ultraviolet emission of deuterium-vapor lamp. Argon is introduced in addition into etching gas.
EFFECT: enhanced selectivity of silicon dioxide etching with respect to monocrystalline and polycrystalline silicon.
3 cl, 1 tbl
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| METHOD AND DEVICE FOR MONITORING PLASMA-CHEMICAL ETCHING PROCESSES USING DIFFERENTIAL OPTICAL ACTINOMETRY | 2003 |
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| METHOD FOR REACTIVE ION ETCHING OF SILICON NITRIDE | 2001 |
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