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2 034 779

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C1

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IPC

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Application

4735395/26, 1989-07-17

(22)

Actual filing date

1989-07-17

(45)

Published

1995-05-10

(72)

Inventor

Shul'Zhenko Aleksandr Aleksandrovich[Ua]Petrusha Igor' Andreevich[Ua]Gazha Georgij Pavlovich[Ua]Svirid Aleksandr Andreevich[Ua]Sharupin Boris Nikolaevich[Ru]Potekhin Sergej Mikhajlovich[Ru]Mamet'Ev Robert Jusupovich[Ru]Liorentsevich Evgenij Alekseevich[Ru]

(73)

Holder

Institut Sverkhtverdykh Materialov Im.V.N.Bakulja An Ukrainy

METHOD OF PREPARING OF POLYCRYSTALS ON THE BASIS OF BORON NITRIDE SOLID MODIFICATION Russian patent published in 1995 - IPC

Abstract RU 2034779 C1

FIELD: production of heat conductive dielectrics. SUBSTANCE: method involves effect of high pressures (7.0-9.5 GPa) and temperatures (1800-2400 C) for 40-90 s on the parental pyrolytic boron nitride containing 10 wt.-% rhombohedral boron nitride, not less. EFFECT: improved method of polycrystal preparing. 1 tbl

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RU 2 034 779 C1

Authors

Shul'Zhenko Aleksandr Aleksandrovich[Ua]

Petrusha Igor' Andreevich[Ua]

Gazha Georgij Pavlovich[Ua]

Svirid Aleksandr Andreevich[Ua]

Sharupin Boris Nikolaevich[Ru]

Potekhin Sergej Mikhajlovich[Ru]

Mamet'Ev Robert Jusupovich[Ru]

Liorentsevich Evgenij Alekseevich[Ru]

Dates

1995-05-10—Published

1989-07-17—Filed

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