FIELD: radio electronics. SUBSTANCE: mixture for manufacture of metal oxide nonlinear resistors includes zinc oxide and oxides of bismuth, antimony, manganese, cobalt, nickel, silicon, chrome, aluminium, zirconium. It is added with boron oxide with following proportion of components, molecular per cent: bismuth oxide 1.9-2.1; antimony oxide 1.5-1.7; manganese oxide 0.4-0.6; cobalt oxide 0.5-0.7; nickel oxide 0.4-0.6; silicon oxide 0.12-0.2; chrome oxide 0.05-0.5; zirconium oxide 0.05-0.5; boron oxide 0.015-0.075; aluminium oxide 0.001-00.3; zinc oxide being the balance. EFFECT: manufacture of resistors stable to long-duration exposure to alternating voltage (50 Hz) with low values of protection under thunderstorm and commutation overvoltages and high loading capability. 6 dwg, 1 tbl
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Authors
Dates
1995-07-09—Published
1992-06-22—Filed