POWER SEMICONDUCTOR RESISTOR AND METHOD FOR ITS MANUFACTURING Russian patent published in 1997 - IPC

FIELD: semiconductor instruments. SUBSTANCE: device is designed as n-type monocrystal silicon with radiation flaws which concentration is in range from 3•10¹² per cubic centimeter for silicon which specific resistance ρ_o= 700 to 3•10¹³ per cubic centimeter for silicon which specific resistance ρ_o= 150. Flaws in silicon are generated by means of electron beam which power is 2-5 MeV and density is in range from 2,5•10¹⁴ per square centimeter for silicon with ρ_o= 700 to 2,5•10¹⁵ per square centimeter for silicon with ρ_o= 150. After radiation temperature-stabilization firing is performed. EFFECT: increased functional capabilities. 2 cl, 4 tbl, 2 dwg