FIELD: optical lenses production. SUBSTANCE: Si or Ge single-crystal wafers are used, cut in perpendicular to the third or to the fourth order crystallographic axes. The wafers are subjected to deformation at constant speed which is no higher than 2·10-2 mm/s. Wafers are deformed in array, which has working surface to be formed by rotation of the curve, which has two conjugate arcs. Radiuses of the arcs of the circles equal to Rbl and rm. Values of the radiuses are determined from the relations , and h ≅ hmax≅ R, where R is radius of hemispheric punch, Z is radius of initial blank, δ is thickness of the blank, hmax is depth of the matrix, h is preset sag of blank or lens. EFFECT: improved efficiency. 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING MENISCUS FROM LITHIUM FLUORIDE CRYSTALS | 2019 |
|
RU2712680C1 |
METHOD FOR MANUFACTURING OF MICROCHANNEL PLATE WITH DEFLECTED CHANNELS | 1994 |
|
RU2087989C1 |
IRRADIATION RESISTANT GLASS | 1993 |
|
RU2079456C1 |
OPTIC GLASS | 1993 |
|
RU2077513C1 |
GLASS | 1994 |
|
RU2097347C1 |
DEVICE FOR MACHINING FLAT PARTS FROM BOTH SIDES | 1994 |
|
RU2094209C1 |
MAGNETO-OPTICAL GLASS | 1993 |
|
RU2064903C1 |
GLASS FOR LIGHT FILTER | 1992 |
|
RU2045488C1 |
SPECTROMETER | 1994 |
|
RU2105272C1 |
METHOD FOR NONDESTRUCTIVE DETERMINATION OF BREAK-DOWN VOLTAGE OF FIBER-OPTICAL PLATES | 1990 |
|
RU2020501C1 |
Authors
Dates
1995-08-27—Published
1993-02-26—Filed