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2 042 620

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IPC

(21) (22)

Application

93038277/26, 1993-08-02

(22)

Actual filing date

1993-08-02

(45)

Published

1995-08-27

(72)

Inventor

Simonova L.G.Mikhajlenko E.L.Bulgakova Ju.O.Karasjuk N.V.

(73)

Holder

Institut Kataliza Im.G.K.Boreskova So Ran

METHOD OF SILICON DIOXIDE PRODUCING Russian patent published in 1995 - IPC

Abstract RU 2042620 C1

FIELD: inorganic chemistry. SUBSTANCE: SiO2 is precipitated by addition of sodium or potassium silicate solutions to solutions of ammonium salts of sulfuric, hydrochloric, carbonic, nitric, formic or acetic acids at the ratio of total SiO2 adding with silicate to the total content of ammonium salt followed by treatment of hydrogel prepared. Precipitation conditions: temperature is 35-95 C, rate is 100-270 g SiO2/lsusp·h and additional treatment of hydrogel SiO2 after precipitation with ammonium salt solutions taken from the order: (NH4)2SO4, or NH4Cl, or (NH4)2CO3,, or NH4HCO3, or NH4NO3,, or NH4HCO2,, or NH4CH3CO2.. EFFECT: improved method of producing. 2 cl, 1 tbl

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RU 2 042 620 C1

Authors

Simonova L.G.

Mikhajlenko E.L.

Bulgakova Ju.O.

Karasjuk N.V.

Dates

1995-08-27—Published

1993-08-02—Filed

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