METHOD OF PREPARING BURDEN FOR SILICON MELTING Russian patent published in 1995 - IPC

FIELD: nonferrous metallurgy. SUBSTANCE: method involves grinding burden on the base of silica-bearing material and carbonaceous reducer; mixing component in stoichiometric ratio and agglomerating in the presence of binder. Agglomeration is conducted at temperature of 50-200 C. Prior to agglomeration, elementary silicon with lump size of 0.01 mm is added into the mixture. Water glass is used as binder. The process is conducted at the following ratio of components, by weight: elementary silicon 1-6; water glass 12-20; stoichiometric mixture of silica-bearing material and carbonaceous reducer 74-87. EFFECT: increased efficiency and high quality of silicon. 6 tbl