MONOCRYSTALLINE FILM GROWING METHOD Russian patent published in 1995 - IPC

Abstract RU 2042746 C1

FIELD: growing of monocrystalline films of water-soluble substances from oversaturated aqueous solutions on foreign substrate with parallel strips of various configuration applied to substrate. SUBSTANCE: method involves using substrate with parallel straight or broken strips, with distance between strips being 2-25 mm. As an example method for obtaining monocrystalline films based on potassium biphthalate on silicon substrate is presented. Substrates with area of 10 cm² are fixed on platform, which is rotated with speed of 60 rev/min, in crystallizer having volume of 1l. Crystalline film based on potassium biphthalate is growing during several days on substrates at crystallization temperature of 37-50 C and oversaturations of 1-5% Thickness of film is up to 10-20 nm and area of 6-8 cm². EFFECT: increased efficiency and high quality of film. 2 cl, 1 dwg

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RU 2 042 746 C1

Authors

Okhrimenko T.M.

Kuznetsov V.A.

Zadorozhnaja L.A.

Matjushkina M.L.

Dates

1995-08-27—Published

1992-04-13—Filed