FIELD: manufacture of mono-crystalline materials and films, possibly used for making semiconductor materials suitable for solar cells, integrated circuit boards, solid-state SHF-devices.
SUBSTANCE: method comprises steps of using as material of substrates for growing films of GaAs (100) mono-crystals of intermetallic compounds made of one of binary alloys such as NiAl, CoAl, AlTi, NiGa.
EFFECT: possibility for growing mirror epitaxial films of GaAs in wider temperature range of deposition and over-saturation, simplified process for making devices of reduced cost.
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